Short Course Sept 04 21th VMIC


VLSI  MULTILEVEL  INTERCONNECTION 

STATE-OF-THE-ART
SEMINAR
 

Wednesday, September 29, 2004 

    This year’s state-of-the-art SEMINAR will address those issues associated with current fundamental developments in advancing VLSI/ULSI multilevel interconnection towards greater functionality, density and speed.  It will include a review and discussion of those primary topical areas which impact today's multilevel interconnection event as well as project future direction  for this critical industry.  A distinguished set of lecturers will participate in this SEMINAR, which is a MUST for all engineers, managers and technicians working on VLSI/ULSI multilevel interconnection.  The registration fee includes coffee breaks, luncheon and a visuals booklet. THIS COURSE HAS LIMITED ENROLLMENT.  YOU ARE ENCOURAGED TO ADVANCE REGISTER EARLY.  

 

TOPICAL COVERAGE 

I.     INTRODUCTORY REMARKS
Dr. Thomas E. Wade

Seminar Chairman
University of South Florida


 

II.  ULSI CHALLENGES: 

NANOMETER SCALE INTERCONNECT
CHALLENGES
Dr. Kaustav Banerjee

University of California
Santa Barbara, California
 

 

III.  DIELECTRICS: 

LOW-k & ULTRA LOW-k
POROUS  DIELECTRICS
Dr. Willi Volksen
IBM Almaden Research Center
San Jose, California
 

 

IV.  COPPER BARRIERS:
 

ULTRA THIN TRANSITION METAL
ADVANCE BARRIERS FOR COPPER
METALLIZATION
Dr. Ravi K. Laxman
ATMI Advanced Materials
Bethlehem, Pennsylvania
 

Seminar Luncheon

“CVD LOW-k / COPPER METALLIZATION FOR 90
NANOMETERS AND CHIP PACKAGE INTERACTIONS”
Dr. Hazara Rathore
IBM MICROELECTRONICS
New Hope Junction, New York
 

V.  RELIABILITY ISSUES:
 

TRENDS IN ELECTROMIGRATION OF
65 nm TECHNOLOGY & BEYOND
Dr. Young-Joon Park
Texas Instruments
Dallas, Texas

 

VI.  BEOL DIELECTRICS:
 

ULSI BACK-END-OF-THE LINE
DIELECTRIC DEVELOPMENTS
Dr. Devendra Kumar
ASM Corporation
San Jose, California
 

 

VIII.  3-D INTEGRATED CKTS:
 

WAFER-LEVEL 3D INTEGRATED CKTS: AN
ALTERNATIVE TO SoCs & SiPs?
Dr. Ronald Gutmann
Rensselaer Polytechnical Institute
Troy, New York
 

 

IX.   CLOSING REMARKS

 

 


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