SEVENTH INTERNATIONAL
CHEMICAL-MECHANICAL POLISH (C.M.P.) PLANARIZATION
FOR ULSI MULTILEVEL INTERCONNECTION CONFERENCE
(CMP-MIC) AND EXHIBITION
February 27 - March 1, 2002
CMP-MIC CONFERENCE OBJECTIVES
To assemble researchers and technical support personnel from Industry, Universities and Government Laboratories from around the globe to address all current and future issues related to CHEMICAL-MECHANICAL POLISH PLANARIZATION as applied to on-chip ULSI Multi-level Interconnection applications.
OPENING SESSION - 8:00 A.M.
Welcoming Remarks
Dr. Thomas E. Wade
General Chairman
University of South Florida
SESSION I -- 8:15 A.M.
KEYNOTE ADDRESS
SEMICONDUCTOR INDUSTRY REPRESENTATIVES:
" WHAT OUR COMPANY NEEDS FROM CMP IN THE NEAR FUTURE "
INTEL
Mansour Moinpour
Santa Clara, California
MOTOROLA
Janos Farkas
Austin, Texas
HEWLETT PACKARD
Michael Monroe
Corvallis, Orgeon
LSI LOGIC
Peter Burke
Santa Clara, California
Coffee Break 9:45 - 10 A.M.
SESSION II - 10:30 A.M. - 12 Noon
VLSI MULTILEVEL INTERCONNECTION
C.M.P. CONDUCTOR PROCESSES - Part I
Chairman: Dr. Michael Fury
EKC TECHNOLOGY
Hayward, California
- 2.A "Characterization of Copper CMP Process for Copper/Low-k Submicron Interconnect Structure" by T.C. Tsai, Pak Leung and K. C. Lin; UNITED FOUNDRY SER; Hopewell Jct., N.Y.; Markus Naujok; INFINEON TECH; Hopewell Jct., NY; L. A. Clevenger; IBM; Hopewell Jct., N.Y.; H.C. Chen, UNITED MICRO CORP; Taiwan, ROC.
- 2.B "The Development of a Production Worthy Chemical-Mechanical Polishing Process for 0.13 micron Technology Node With Copper/Spin-on-Glass Low-k Interconnection"
by Hsueh-Chung Chen, Shih-Hsun Hsu, Shao-Chung Hu, Chia-Lin Hsu, Wen-Yi Hsieh and Po-Wen Yen; UNITED MICRO CORP; Taiwan, R.O.C. Invited Paper
- 2.C "The Impact of Inhibitor Levels on Corrosion During Copper Chemical Mechanical Polish" by Mona Eissa, Lindsey Hall, Nilesh Doke, Satyavolu Papa Rao; TEXAS INSTRUMENTS; Dallas, TX; and Ashutosh Misra and Matthew Fisher; AIR LIQUIDE ELEC; Dallas, TX.
- 2.D "A Study on the Solid Content of Silica Slurry for Advanced Copper/Low-k Interconnection" by Shih-Hsun Hsu, Chia-Lin Hsu, Shao-Chung Hu, Fu Yang, Hsueh-Chung Chen, Wen-Yi Hsieh and Po-Wen Yen; UNITED MICROELECTRONICS COPR; Taiwan, R.O.C.
--- POSTER PAPERS ---
- 2.E "A Novel Approach to Improve Uniformity of Copper Chemical-Mechanical Polish on Linear Polisher" by W. C. Chiou, H. H. Kuo, S. M. Jang, C. H. Yu and M. S. Liang; TAIWAN SEMI MFG CO; Taiwan, R.O.C.
Box Lunches - 12:00 to 12:45 P.M.
Visit Industrial Exhibitors 12:45 - 1:30 PM
SESSION III - 1:30 - 3:40 P.M.
VLSI MULTILEVEL INTERCONNECTION
CMP MODELING & SIMULATION - Part I
and CMP CONSUMABLES - Part I
CMP MODELING & SIMULATION - Part I
Chairman: Dr. Frank Kaufman
CABOT MICROELECTRONICS
Aurora, Illinois
- 3.A "Material Removal Regions in Chemical-Mechanical Polish: Coupling Effects of Slurry Chemicals, Abrasive Size Distribution and Wafer-Pad Contact Area" by Jianfeng Luo, Serdar Aksu and David Dornfeld; UNIVERSITY of CALIFORNIA; Berkeley, CA. Invited Paper
- 3.B "Numerical Investigation of the Effect of Pad Groove in Chemical Mechanical Planarization Process" by Wes Jeng; ASIA IC MIC-PROCESS; Taiwan, R.O.C.; and Jian J. Yeuan and Shih H. Lin; FENG CHIA UNIV; Taiwan, R.O.C.
- 3.C "Effects of Viscoelastic Pad Deformation on Material Removal Rate in Chemical Mechanical Polishing" by Guanghui Fu and Abhijit Chandra; IOWA STATE UNIV; Ames, IA.
--- POSTER PAPERS ---
- 3.D "In-situ Electrochemical and Mechanical Measurements to Understand the Chemical Mechanical Polishing Phenomena" by Seung-Mahn Lee, Wonseop Choi and Rajiv K. Singh; UNIV of FLORIDA; Gainesville, FL.
- 3.E "Enhancement of the Pad Profile and Lifetime Using Pad Conditioning Simulation With Disk Sweep Rate" by Hyung-Soon Park, Jae-Hoon Choi, Woo-Jin Lee, Yong-Soo Choi, Sang-Ick Lee and Hyun-Chul Sohn; HYNIX SEMI; Kyunggi-Do, KOREA.
- 3.F "Modeling of the Material Removal for Chemical Mechanical Planarization Based on Fixed Abrasives" by Cyriaque Sukam, Jongwon Seok, Andrew T. Kim, John A. Ticky and Timothy S. Cale; RENSSELAER POLYTECH INST; Troy, N.Y.
CMP CONSUMABLES - Part I
- 3.G "Comparison of Two Different Conditioning Disc Designs in Reference to Cost of Ownership of Tungsten Chemical Mechanical Planization" by Andreas Haacker, Matthias Zellmer and Georg Morsch; PETER WOLTERS CMP SYS; Rendsbury, GERMANY.
- 3.H "Characteristics of Slurry Including Phosphoric Acid for Chemical Mechanical Planarization of Copper and Tantalum Nitride" by Jong-Heun Lim, Min-Ho Kim, Jong-Dai Park and Chan-Seok Park; DONGJIN SEMICHEM CO; Kyungki-Do, KOREA.
- 3.I "Highly Selective Removal of Barrier (TaN/Ta) to TEOS Silicon Dioxide, Silicon Carbide, Silicon Nitride and Copper by Reformulated Slurry" by Jinru Bian; RODEL; Newark, DE.
- 3.J "Evaluation of 200 mm MPTI Floating Head With Varied Consumables" by H. M. Wang, G. Moloney, Cormac Walsh and Alex Reyes; MULTI PLANAR TECH; San Jose, CA.
--- POSTER PAPERS ---
- 3.K "Utilizing Advanced Pad Conditioning and Pad Motion in Tungsten Chemical Mechanical Planarization" by Sang-Yong Kim, Yang-Won Lee, JaeDeok Jeong, SangChul Shim, KwangHa Suh and Jeong Lee; ANAM SEMI; Kyunggi-Do, KOREA.
- 3.L "Impact of Diamond Conditioning Disk Characteristics on Removal Rates of Polyurethane Polishing Pads" by Mark Bubnick, Sohail Qamar, Thomas Namola and Dave McClew; ABRASIVE TECH. INC; Lewis Center, OH.
- 3.M "Regeneration of Used Oxide Slurry and Its Application to Oxide Chemical-Mechanical Planarization " by Myoung-Shik Kim, Sang-Ho Lee, Jin-goo Park; HANYANG UNIV; Ansan, KOREA; Kwang-Jun Lee and Roh-Young Sung; NEW-YOUNG M TECH; KOREA; and Sun-Woong Woo and Bong-Chun Kim; HYNIX SEMI; Kyunggi-Do, KOREA.
Coffee Break 3:40 - 3:55 P.M.
SESSION IV - 3:55 - 5:05 P.M.
VLSI MULTILEVEL INTERCONNECTION
C.M.P. NOVEL APPLICATIONS
Chairman: Dr. Peter Burke
LSI LOGIC
Santa Clara, California
- 4.A "Novel Chemical-Mechanical Planarization Applications and Challenges" by David J. Stein; SANDIA NAT'L LABS; Albuquerque, NM. Invited Paper
- 4.B "The Haze Free Polishing Process of 12 inch Wafers as a Part of Wafer Re-Claiming" by Hella Moller and Georg Morsch; PETER WOLTERS CMP SYS; Rendsburg, GERMANY; and David Lewis; PURE WAFER; Swansea, UNITED KINGDOM.
- 4.C "A Study on the Optimization of Chemical-Mechanical Polishing of Polysilicon for Advanced Embedded Memory Applications" by Zong-Huei Lin, Art Yu, Fu Yang, Hsueh-Chung Chen, Wen-Yi Hsieh and Po-Wen Yen; UNITED MICROELECTRONICS CORP; Taiwan, R.O.C.
Thursday , February 28, 2002
SESSION V - 9 - 10 A.M.
VLSI MULTILEVEL INTERCONNECTION
CMP CONSUMABLES - Part II
Chairman: Dr. Tamba Tugbawa
M. I. T.
Cambridge, Massachusetts
- 5.A "Filtration of Chemical Mechanical Polishing Slurry Using Pleated and Depth Filters and Its Impact on Product Yields" by Holly Linkowich; FILTERITE ELECTRONICS; Timonium, MD; and Jeffrey Sultemeier; MOTOROLA; Austin, TX.
- 5.B "Evaluation of a Pattern Selectivity in Fixed Abrasive Pad Using Hydrophilic Polymer" by Ho-Youn Kim, Jae-Hong Park, Hae-Do Jeong; PUSAN NAT'L UNIV; Pusan, KOREA.
- 5.C "Well Controlled Abrasive Assure Successful Chemical Mechanical Planarization Operation" by Robert Her, Eric Oswald, Brian Edelbach and John Givens; FERRO ELECTRONIC MAT'L; Penn Yan, N.Y.; and Josh Tucker; SAMSUNG SEMI; Austin, TX.
--- POSTER PAPERS ---
- 5.D "The Pad Life and Performance Study of Tungsten Chemical Mechanical Planarization Processes" by Pao-Kang Niu, TAIWAN SEMI MFG CORP; Taiwan, R.O.C.
- 5.E "Integrated Chemical Mechanical Planarization Barrier Slurry Development To Achieve Adjustable Rate Selectivities" by Qianqiu Ye, John Quanci, Matthew VanHanehem and Terrence Thomas; RODEL; Newark, DE.
Coffee Break 10 - 10:15 A.M.
SESSION VI - 10:15 - 12:15 P.M.
VLSI MULTILEVEL INTERCONNECTION
PROCESS CHARACTERICATION
Chairman: Dr. Rodney Morad
APPLIED MATERIALS
Santa Clara, California
CMP CLEANING PROCESSES
- 6.A "Defect Issues in Chemical Mechanical Planarization" by Paul Feeney; CABOT CORP; Aurora, IL.
Invited Paper
- 6.B "Reduction in the Polishing Residue and Micro Dishing Induced During the Plug Isolation Chemical Mechanical Planarization Using Acidic Slurry" by Hyung-Soon Park, Pan-Ki Kwon, Woo-Jin Lee, Ki-Chul Ahn, Sang-Ick Lee, Yong-Soo Choi and Hyun-Chul Sohn; HYNIX SEMI; Kyunggi-Do, KOREA.
- 6.C "Effect of Process Conditions on Defectivity in Abrasive-Free Chemical Mechanical Planarization of Patterned Copper/ SiLK Wafers" by Lirong Guo, Jason Keleher, Craig Burkhard and Yuzhuo Li; CLARKSON UNIV; Potsdam, N.Y.
Invited Paper
- 6.D "Benefits of Point-of-Use Blending on Chemical Mechanical Polishing Slurry Pot Life" by Brandon Scott, Cass Shang and Bob Small; EKC TECHNOLOGY; Hayward, CA; and John V. Pozniak, Katherine Hutchison, Peter M. Pozniak and Rakesh K. Singh; BOC EDWARDS; Santa Clara, CA.
- 6.E "Tribological Aspects in Chemical Mechanical Polishing" by Hyoung-Jae Kim, Dae-Hee Kwon and Hae-Do Jeong; PUSAN NAT'L UNIV; Pusan, KOREA; and Eung-Sug Lee and Young-Jae Shin; KOREA INST of MACHINERY & MAT'L; Taejon, KOREA.
- 6.F "Control of Critical Pressure and Adhesion Strength in Copper and Low Dielectric Constant Layer in Chemical Mechanical Planarization" by Tohru Hara, Hiroki Toida and Fumiaki Togoh; HOSEI UNIV; Tokyo, JAPAN.
- 6.G "Friction Induced Chemical Interaction During CMP - A New Removal Mechanism" by Hong Liang; UNIV of ALASKA; Fairbanks, AK; and Thierry LeMogne, Jean-Michel Martin; TRIBOLOGY & DYNAMICS SYS.LAB; Ecole Centrale de Lyon, FRANCE. Invited Paper.
--- POSTER PAPERS ---
- 6.H "Monitoring Delamination During Copper/Low-k Planarization" by Norm Gitis and Michael Vinogradov; CTR of TRIBOLOGY; Campbell, CA.
- 6.I "Understanding and Addressing Total Wafer Removal Rate NonUniformities" by Travis R. Taylor and Shan C. Xu; LAM RESEARCH; Fremont, CA.
LATE NEWS PAPER
- 6.J "Chemical Mechanical Planarization Process Control Via In-Situ and Real Time Chemical Endpoint Detection" by Matthias Handke; INFINEON TECH; Dresden, GERMANY; and Werner Moser; ECO PHYSICS AG; Durnten, SWITZERLAND.
(Thursday, Lunch on Your Own, Not Provided by Conference,
Next Session Starts at 2:30 P.M.)
SESSION VII - 1:15 P.M. - 2:15 P.M.
VLSI MULTILEVEL INTERCONNECTION
DEDICATED TIME FOR CMP
POSTER PAPERS, EXHIBIT VIEWING
NOTICE TO AUTHORS OF POSTER PAPERS
Plan to put your poster up on Wednesday, Feb. 27, before 9 am at the location designated (Salon 1 - 4). Poster boards will be provided. Be available to answer questions during Session VII. Remove all posters by 3 PM Friday, Mar. 1.
SESSION VIII - 2:15 - 5:00 P.M.
VLSI MULTILEVEL INTERCONNECTION
CMP SHALLOW TRENCH ISOLATION PROCESSES
Chairman: Dr. Rod Kistler
LAM RESEARCH CORP
Fremont, California
- 8.A "Chemical Mechanical Planarization: Aiming for Perfect Planarization" by Patrick Leduc; CEA-LETI; Grenoble, FRANCE; Pascal Berar and Haruki Nojo; EKC TECH; Kawasaki; JAPAN; Jean-Francois Lugand; ST MICRO; Mylan, FRANCE.
- 8.B "Improved Direct Polish Shallow Trench Isolation Chemical Mechanical Planarization Process With High Selectivity Slurry: Reduced Microscratching and Increased Productivity" by Benjamin A. Bonner, Deepak Kumar, Anand Iyer, Thomas H. Osterheld and Annabel S. Nickles; APPLIED MATERIALS; Santa Clara, CA.
- 8.C "Shallow Trench Isolation Chemical Mechanical Planarization Process With High-Selectivity Slurry" by T.C. Tseng, L.J. Yang, C. P. Hou, C.Y. Fu, S.M. Jang, C.H. Yu and M. S. Liang; TAIWAN SEMI MFG CO; Taiwan, R.O.C.
- 8.D "Production Worthy Fixed Abrasive Direct Shallow Trench Isolation Chemical Mechanical Planarization for Sub - 0.18 micron Applications" by Carlton D. Ollison and Keith G. Pierce; ATMEL CORP; Irving, TX.
- 8.E "Deep Sub-Micron Scale Shallow Trench Isolation Chemical Mechanical Planaraization Planarity Analysis" by K.C. Wu, Karen Wong, Vei-Han Chan, David Lui and Ching-Hwa Chen; MOSEL VITELIC; San Jose, CA.
- 8.F "Fixed Abrasive and Selective Chemistries: Some Real Advantages for Direct Shallow Trench Isolation Chemical Mechanical Planarization" by John Gagliardi, Richard Webb and Chris Rueb; 3M CENTER; St Paul, MN.; Greg Menk, Pete McReynolds, Gopal Prabhu and Tom Osterheld; APPLIED MATERIALS; Santa Clara, CA.
--- POSTER PAPERS ---
- 8.G "A Study on the Optimization of Shallow Trench Isolation Chemical Mechanical Planarization for 0.1 micron Technology Node" by Zong-Huei Lin, Art Yu, Fu Yang, Hsueh-Chung Chen, Wen-Yi Hsieh and Po-Wen Yen; UNITED MICROELECTRONICS CORP; Taiwan, R.O.C.
- 8.H "Planarization Performance of Solo IC 1000 and Stacked IC 1000 on Lam Teres Chemical Mechanical Planarization System With XD Platen" by Sanjay Pejavar, David Wei and Linda Jiang; LAM RESEARCH; Fremont, CA.
- 8.I "New Family of Agents for High Selectivity in Ceria- Based Shallow Trench Isolation Chemical Mechanical Planarization" by Eric Oswald, Brian Edelbach and Bob Her; FERRO ELECTRONIC MAT'L; Penn Yan, N.Y.
Friday, March 1, 2002
SESSION IX - 9:00 - 10:20 A.M.
VLSI MULTILEVEL INTERCONNECTION
C.M.P. DIELECTRIC PROCESSES
Chairman: Dr. David Stein
SANDIA NAT'L LABS
Albuquerque, New Mexico
- 9.A "Chemical Mechanical Planarization System Using Fixed Abrasive (FX-CMP) for Dielectric Planarization" by Souichi Katagiri, K. Yasui, Y. Kawamura, U. Yamaguchi, M. Nagasawa, F. Kanai, R. Kawai and M. Tokuda; HITACHI ; Tokyo, JAPAN; S. Moriyama; INST. of TECHNOLOGY; Tokyo, JAPAN; and Y. Tanaka, M. Honda and N. Yamada; NIHON TOKUSHO KENTO CO; Tokyo, JAPAN.
- 9.B "Development for Low-k/Barrier Layers" by Nichole Koontz, Gert Moyaerts, Richard Jenkins, Saeed Mohseni and Deepak Mahulikar; PLANAR SOLUTIONS; Queen Creek, AZ.
- 9.C "Automated Process Control of Total Wafer Uniformity for Improved Productivity in Oxide Chemical Mechanical Planariztion" by Jimin Zhang, Joseph Paik, Brian Lusher, Brian Brown, Sidney Huey, Moshe Sarfaty, Arulkumar Shanmugasundram, Alexander Schwarm and Annabel S. Nickles; APPLIED MATERIALS; Santa Clara, CA.
- 9.D "Pad Conditioning and Removal Rate Stability in Oxide Chemical Mechanical Planarization" by A. Scott Lawing; RODEL; Phoenix, AZ.
--- POSTER PAPERS ---
- 9.E "A Study on Chemical Mechanical Polishing of Polymer Based Materials for Advanced Back-End-of-the-Line Interconnection" by Liang-Yuan Fang, Shao-Chung Hu, Hsueh-Chung Chen, Wen-Yi Hsieh, Po-Wen Yen; UNITED MICRO CORP; Taiwan, R.O.C.
- 9.F "Evaluation of ESM-U Pad With Varied Silica Slurries for Oxide Chemical Mechanical Polishing Process" by H. M. Wang and G. Maloney; MULTI PLANAR TECH; San Jose, CA; G. Duncan; UNIVERSAL PHOTONICS; Folsom, CA.
Coffee Break 10:20 - 10:35 A.M.
SESSION X - 10:35 A.M. - 12 P.M.
VLSI MULTILEVEL INTERCONNECTION
C.M.P. CONDUCTOR PROCESSES - Part II
Chairman: Dr. Kathleen Perry
CABOT MICROELECTRONICS
Aurora, Illinois
- 10.A "Copper Chemical Mechanical Planarization - Effect of Polishing Pad Characteristics on Copper Removal" by A. J. Jin, Carlyn Sainio, Fen Dai and K.Y. Ramanujam; LAM RESEACH; Fremont, CA; and Jun Xaio, Jack Goodman and Norman Gitis; CTR for TRIBOLOGY; Campbell, CA.
- 10.B "The Dynamic Slurry and Tungsten Chemical Mechanical Polishing Process Monitor Method and Auto Tuning System Study" by Shui-Hung Chen, Mu-Chi Chiang, L. J. Hung and Pao-Kang Niu; TAIWAN SEMI MGF CO; Taiwan, R.O.C.
- 10.C "Controlling Metal Loss and Topography During Chemical Mechanical Planarization of Copper Low-k Damascene Structures" by Kapila Wijekoon, Yongsik Moon, Shijian Li, Wei-Yung Hsu and Suketu Parikh; APPLIED MATERIALS; Santa Clara, CA.
- 10.D "Imporved TiN Liners for Enhanced Tungsten Chemical Mechanical Planarization Endpoint Detection" by V. Fortin, K.C. Wu, D. Avalos and D. Lui; MOSEL VITELIC CORP; San Jose, CA
CMP-MIC LUNCHEON - 12:00 - 2:00 P.M.
" COPPER POLISHING WITH DIELECTRIC CONSTANTS LESS THAN 2.8: CHALLENGES & SOLUTIONS"
Dr. Jayanthi Pallinti
LSI LOGIC CORP.
Research & Development Division
Santa Clara, California
SESSION XI - 2:00 P.M. - 4:00 P.M.
VLSI MULTILEVEL INTERCONNECTION C.M.P. CLEANING PROCESSES &
CMP INSTRUMENTATION & HARDWARE
Chairman: Dr. Philip Fleming
P. H. FLEMING & ASSOC.
Colorado Springs, Colorado
CMP CLEANING PROCESSES
- 11.A "Post Chemical Mechanical Polishing Cleaning Mechanisms - An Experiment-Combined-Numerical Analysis Approach" by Tinggang Zhang, Jonah Lee and Hong Liang; UNIV of ALASKA; Fairbanks, AK; and Kris Bahten; RIPPEY CORP; El Dorado Hills, CA.
- 11.B "Post Chemical Mechanical Polish Cleaning of High Selectivity Slurry for Shallow Trench Isolation CMP" by Hugh Li, Joseph Li and Diane Hymes; LAM RESEARCH; Fremont, CA.
CMP INSTRUMENTATION & HARDWARE
- 11.C "An Intuitive Model for Integration of Closed-Loop-Control for Copper Chemical Mechanical Planarization Using In Situ Metrology" by Mark Meloni; VERITY INSTRUMENTS; Carrollton, TX.
- 11.D "Next Generation Scratch and Corrosion Free Conditioner for Chemical Mechanical Planarization" by Jum-Yong Park, Yi-Koan Hong, Myoung-Shik Kim and Jin-Goo Park; HANYANG UNIV; Ansan, KOREA; and Sung Ko; HUNATECH CO; Daejun, KOREA; and Sang-Ick Lee; HYNIX SEMI; Ichon-si, KOREA.
- POSTER PAPERS -
- 11.E "Evaluation of 200 mm MPTI Floating Head With Pressure Zone Control" by H. W. Wang, G. Moloney, Cormac Walsh and Alex Reyes; MULTI PLANAR TECH; San Jose, CA.; and Huey-Ming Wang; EBARA TECH; San Jose, CA.
- 11.F "Improvements in Edge Polishing Control Through Advances in Carrier Head Technology" by David A. Hansen, Yoichi Shiokawa, Brian Stephenson and David Watts; EBARA TECH; San Jose, CA.
- 11.G "Contamination - Free Liquid Flow Controller" by Dave Wehrs and Chuck Gould, NT INTERNATIONAL; Minneapolils, MN.
- 11.H "Replacing Peristaltic Pumps with Differential Pressure Based Flow Controllers to Increase the Reliability and Performance of CMP Slurry Delivery Systems" by Dave Wehrs and Chuck Gould; NT INTERNTIONAL; Minneapolis, MN.
LATE NEWS PAPERS
- 11.I "Metrology Data Sharing Between Process Steps in a High Volume Manufacturing Environment Utilizing NovaScan System, NovaNet and Nova Engineering Station" by Avron Ger and Oved Or; NOVA MEASURING INSTRUMENTS; Rehovoth, ISRAEL.